Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material

Cheng Wei Shih, Albert Chin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

High mobility thin-film transistor (TFT) is crucial for future high resolution and fast response flexible display. Remarkably high performance TFT, made at room temperature on flexible substrate, is achieved with record high field-effect mobility (μ FE) of 345 cm2/Vs, small sub-threshold slope (SS) of 103 mV/dec, high on-current/off-current (I ON/I OFF) of 7 × 106, and a low drain-voltage (VD) of 2 V for low power operation. The achieved mobility is the best reported data among flexible electronic devices, which is reached by novel HfLaO passivation material on nano-crystalline zinc-oxide (ZnO) TFT to improve both I ON and I OFF. From X-ray photoelectron spectroscopy (XPS) analysis, the non-passivated device has high OH-bonding intensity in nano-crystalline ZnO, which damage the crystallinity, create charged scattering centers, and form potential barriers to degrade mobility.

Original languageEnglish
Article number1147
JournalScientific reports
Volume7
Issue number1
DOIs
StatePublished - 1 Dec 2017

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