Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors

Cheng Wei Shih, Albert Chin*, Chun Fu Lu, Wei Fang Su

*Corresponding author for this work

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

High performance p-type thin-film transistor (p-TFT) was realized by a simple process of reactive sputtering from a tin (Sn) target under oxygen ambient, where remarkably high field-effect mobility (μ FE ) of 7.6 cm 2 /Vs, 140 mV/dec subthreshold slope, and 3 × 10 4 on-current/off-current were measured. In sharp contrast, the SnO formed by direct sputtering from a SnO target showed much degraded μ FE , because of the limited low process temperature of SnO and sputtering damage. From the first principle quantum-mechanical calculation, the high hole μ FE of SnO p-TFT is due to its considerably unique merit of the small effective mass and single hole band without the heavy hole band. The high performance p-TFTs are the enabling technology for future ultra-low-power complementary-logic circuits on display and three-dimensional brain-mimicking integrated circuits.

Original languageEnglish
Article number17066
JournalScientific reports
Volume8
Issue number1
DOIs
StatePublished - 1 Dec 2018

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