Reliable metal-to-metal oxide antifuses

G. Zhang; Chen-Ming Hu; P. Yu; S. Chiang; S. Eltoukhy; E. Hamdy

doi:10.1109/IEDM.1994.383412

Reliable metal-to-metal oxide antifuses

G. Zhang^*, Chen-Ming Hu, P. Yu, S. Chiang, S. Eltoukhy, E. Hamdy

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article

8 Scopus citations

Abstract

This paper presents a new high performance, reliable metal-to-metal antifuse. The problem of switch-off in the programmed antifuses is avoided by using metals with low thermal conductivity and thin oxide.

Original language	English
Pages (from-to)	281-284
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1994.383412
State	Published - 1 Dec 1994
Event	Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 11 Dec 1994 → 14 Dec 1994

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10.1109/IEDM.1994.383412

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Zhang, G., Hu, C-M., Yu, P., Chiang, S., Eltoukhy, S., & Hamdy, E. (1994). Reliable metal-to-metal oxide antifuses. Technical Digest - International Electron Devices Meeting, 281-284. https://doi.org/10.1109/IEDM.1994.383412

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title = "Reliable metal-to-metal oxide antifuses",

abstract = "This paper presents a new high performance, reliable metal-to-metal antifuse. The problem of switch-off in the programmed antifuses is avoided by using metals with low thermal conductivity and thin oxide.",

author = "G. Zhang and Chen-Ming Hu and P. Yu and S. Chiang and S. Eltoukhy and E. Hamdy",

year = "1994",

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AU - Zhang, G.

AU - Hu, Chen-Ming

AU - Yu, P.

AU - Chiang, S.

AU - Eltoukhy, S.

AU - Hamdy, E.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - This paper presents a new high performance, reliable metal-to-metal antifuse. The problem of switch-off in the programmed antifuses is avoided by using metals with low thermal conductivity and thin oxide.

AB - This paper presents a new high performance, reliable metal-to-metal antifuse. The problem of switch-off in the programmed antifuses is avoided by using metals with low thermal conductivity and thin oxide.

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DO - 10.1109/IEDM.1994.383412

M3 - Conference article

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EP - 284

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

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