This paper presents a new high performance, reliable metal-to-metal antifuse. The problem of switch-off in the programmed antifuses is avoided by using metals with low thermal conductivity and thin oxide.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 1994|
|Event||Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
Duration: 11 Dec 1994 → 14 Dec 1994