Abstract
This paper presents a new high performance, reliable metal-to-metal antifuse. The problem of switch-off in the programmed antifuses is avoided by using metals with low thermal conductivity and thin oxide.
Original language | English |
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Pages (from-to) | 281-284 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting |
DOIs | |
State | Published - 1 Dec 1994 |
Event | Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 11 Dec 1994 → 14 Dec 1994 |