Reliable metal-to-metal oxide antifuses

G. Zhang; Chen-Ming Hu; P. Yu; S. Chiang; S. Eltoukhy; E. Hamdy

doi:10.1109/IEDM.1994.383412

Reliable metal-to-metal oxide antifuses

G. Zhang^*, Chen-Ming Hu, P. Yu, S. Chiang, S. Eltoukhy, E. Hamdy

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

This paper presents a new high performance, reliable metal-to-metal antifuse. The problem of switch-off in the programmed antifuses is avoided by using metals with low thermal conductivity and thin oxide.

Original language	English
Pages (from-to)	281-284
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1994.383412
State	Published - 1 Dec 1994
Event	Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 11 Dec 1994 → 14 Dec 1994

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10.1109/IEDM.1994.383412

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title = "Reliable metal-to-metal oxide antifuses",

abstract = "This paper presents a new high performance, reliable metal-to-metal antifuse. The problem of switch-off in the programmed antifuses is avoided by using metals with low thermal conductivity and thin oxide.",

author = "G. Zhang and Chen-Ming Hu and P. Yu and S. Chiang and S. Eltoukhy and E. Hamdy",

year = "1994",

month = dec,

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doi = "10.1109/IEDM.1994.383412",

language = "English",

pages = "281--284",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 11-12-1994 Through 14-12-1994",

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T1 - Reliable metal-to-metal oxide antifuses

AU - Zhang, G.

AU - Hu, Chen-Ming

AU - Yu, P.

AU - Chiang, S.

AU - Eltoukhy, S.

AU - Hamdy, E.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - This paper presents a new high performance, reliable metal-to-metal antifuse. The problem of switch-off in the programmed antifuses is avoided by using metals with low thermal conductivity and thin oxide.

AB - This paper presents a new high performance, reliable metal-to-metal antifuse. The problem of switch-off in the programmed antifuses is avoided by using metals with low thermal conductivity and thin oxide.

UR - http://www.scopus.com/inward/record.url?scp=0028738032&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1994.383412

DO - 10.1109/IEDM.1994.383412

M3 - Conference article

AN - SCOPUS:0028738032

SP - 281

EP - 284

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

Y2 - 11 December 1994 through 14 December 1994

ER -