Reliable high-voltage amorphous InGaZnO TFT for monolithic 3D integration

Ming Jiue Yu, Ruei Ping Lin, Yu Hong Chang, Tuo-Hung Hou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The wide band-gap a-IGZO is a promising channel material to realize high-voltage transistors that can be easily integrated on logic ICs by low-Temperature 3D stacking. This monolithic 3D integration would enable on-chip power management to improve power consumption and integration density. We report a high-voltage a-IGZO TFT with the high-k Al2O3 gate dielectric. By using a low-Temperature process below 200 oC, excellent transistor characteristics, including a current on/off ratio of 109, steep subthreshold swing of 0.1 V/decade, high breakdown voltage of 45 V, and robust bias stress reliability have been demonstrated.

Original languageEnglish
Title of host publication2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781467394789
DOIs
StatePublished - 25 Apr 2016
EventInternational Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 - Hsinchu, Taiwan
Duration: 25 Apr 201627 Apr 2016

Publication series

Name2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016

Conference

ConferenceInternational Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
CountryTaiwan
CityHsinchu
Period25/04/1627/04/16

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