Reliable extraction of interface states from charge pumping method in ultra-thin gate oxide MOSFET's

H. C. Lai*, N. K. Zous, W. J. Tsai, T. C. Lu, Ta-Hui Wang, Y. C. King, Sam Pan

*Corresponding author for this work

Research output: Contribution to conferencePaper

7 Scopus citations

Abstract

The accuracy and validity of charge pumping (CP) method is questionable in ultra-thin gate oxide MOSFET's due to the increase of the direct tunneling currents at low gate biases. A gate pulsing window for the CP technique is proposed to reduce the influence of this parasitic leakage current effect. Within the window, the CP method is still an excellent tool to measure the average interface trap density. Moreover, the range of this window strongly depends on the gate oxide thickness, the channel length and the gate pulsing frequency.

Original languageEnglish
Pages99-102
Number of pages4
StatePublished - 21 Jul 2003
EventIEEE International Conference on Microelectronic Test Structures - Monterey, CA, United States
Duration: 17 Mar 200320 Mar 2003

Conference

ConferenceIEEE International Conference on Microelectronic Test Structures
CountryUnited States
CityMonterey, CA
Period17/03/0320/03/03

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    Lai, H. C., Zous, N. K., Tsai, W. J., Lu, T. C., Wang, T-H., King, Y. C., & Pan, S. (2003). Reliable extraction of interface states from charge pumping method in ultra-thin gate oxide MOSFET's. 99-102. Paper presented at IEEE International Conference on Microelectronic Test Structures, Monterey, CA, United States.