Reliable extraction of interface states from charge pumping method in ultra-thin gate oxide MOSFET's

H. C. Lai; N. K. Zous; W. J. Tsai; T. C. Lu; Ta-Hui Wang; Y. C. King; Sam Pan

Reliable extraction of interface states from charge pumping method in ultra-thin gate oxide MOSFET's

H. C. Lai^*, N. K. Zous, W. J. Tsai, T. C. Lu, Ta-Hui Wang, Y. C. King, Sam Pan

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to conference › Paper › peer-review

7 Scopus citations

Abstract

The accuracy and validity of charge pumping (CP) method is questionable in ultra-thin gate oxide MOSFET's due to the increase of the direct tunneling currents at low gate biases. A gate pulsing window for the CP technique is proposed to reduce the influence of this parasitic leakage current effect. Within the window, the CP method is still an excellent tool to measure the average interface trap density. Moreover, the range of this window strongly depends on the gate oxide thickness, the channel length and the gate pulsing frequency.

Original language	English
Pages	99-102
Number of pages	4
State	Published - 21 Jul 2003
Event	IEEE International Conference on Microelectronic Test Structures - Monterey, CA, United States Duration: 17 Mar 2003 → 20 Mar 2003

Conference

Conference	IEEE International Conference on Microelectronic Test Structures
Country	United States
City	Monterey, CA
Period	17/03/03 → 20/03/03

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title = "Reliable extraction of interface states from charge pumping method in ultra-thin gate oxide MOSFET's",

abstract = "The accuracy and validity of charge pumping (CP) method is questionable in ultra-thin gate oxide MOSFET's due to the increase of the direct tunneling currents at low gate biases. A gate pulsing window for the CP technique is proposed to reduce the influence of this parasitic leakage current effect. Within the window, the CP method is still an excellent tool to measure the average interface trap density. Moreover, the range of this window strongly depends on the gate oxide thickness, the channel length and the gate pulsing frequency.",

author = "Lai, {H. C.} and Zous, {N. K.} and Tsai, {W. J.} and Lu, {T. C.} and Ta-Hui Wang and King, {Y. C.} and Sam Pan",

year = "2003",

month = jul,

day = "21",

language = "English",

pages = "99--102",

note = "null ; Conference date: 17-03-2003 Through 20-03-2003",

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Reliable extraction of interface states from charge pumping method in ultra-thin gate oxide MOSFET's. / Lai, H. C.; Zous, N. K.; Tsai, W. J.; Lu, T. C.; Wang, Ta-Hui; King, Y. C.; Pan, Sam.

2003. 99-102 Paper presented at IEEE International Conference on Microelectronic Test Structures, Monterey, CA, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Reliable extraction of interface states from charge pumping method in ultra-thin gate oxide MOSFET's

AU - Lai, H. C.

AU - Zous, N. K.

AU - Tsai, W. J.

AU - Lu, T. C.

AU - Wang, Ta-Hui

AU - King, Y. C.

AU - Pan, Sam

PY - 2003/7/21

Y1 - 2003/7/21

N2 - The accuracy and validity of charge pumping (CP) method is questionable in ultra-thin gate oxide MOSFET's due to the increase of the direct tunneling currents at low gate biases. A gate pulsing window for the CP technique is proposed to reduce the influence of this parasitic leakage current effect. Within the window, the CP method is still an excellent tool to measure the average interface trap density. Moreover, the range of this window strongly depends on the gate oxide thickness, the channel length and the gate pulsing frequency.

AB - The accuracy and validity of charge pumping (CP) method is questionable in ultra-thin gate oxide MOSFET's due to the increase of the direct tunneling currents at low gate biases. A gate pulsing window for the CP technique is proposed to reduce the influence of this parasitic leakage current effect. Within the window, the CP method is still an excellent tool to measure the average interface trap density. Moreover, the range of this window strongly depends on the gate oxide thickness, the channel length and the gate pulsing frequency.

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M3 - Paper

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EP - 102

Y2 - 17 March 2003 through 20 March 2003

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