Reliability study on BST capacitors for GaAs MMIC

Atsushi Noma; Daisuke Ueda

doi:10.1080/10584589708015697

Reliability study on BST capacitors for GaAs MMIC

Atsushi Noma^*, Daisuke Ueda

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article

11 Scopus citations

Abstract

Reliability of BST (Ba _0.7 Sr _0.3 TiO ₃ ) capacitors made by using a MOD technique was studied in terms of TDDB. DLTS analysis revealed peak-shift toward the lower-temperature side as the degradation goes further. Obtained energy level of interfacial states at grain boundaries was 0.75eV. We found the capture cross section of the level increases after the bias-temperature stress. We also found that the larger grain size of BST film gives longer lifetime. These results suggest that the reliability is to be determined by the interface of grains.

Original language	English
Pages (from-to)	69-78
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	15
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589708015697
State	Published - 1 Jan 1997

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Noma, A., & Ueda, D. (1997). Reliability study on BST capacitors for GaAs MMIC. Integrated Ferroelectrics, 15(1-4), 69-78. https://doi.org/10.1080/10584589708015697

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