Reliability study of InGaP/GaAs HBT for 28V operation

Frank Hin-Fai Chau; Barry Jia-Fu Lin; Yan Chen; Mark Kretschmar; Chien-Ping Lee; Nan-lei Larry Wang; Xiaopeng Sun; Wenlong Ma; Sarah Xu; Peter Hu

Reliability study of InGaP/GaAs HBT for 28V operation

Frank Hin-Fai Chau, Barry Jia-Fu Lin, Yan Chen, Mark Kretschmar, Chien-Ping Lee, Nan-lei Larry Wang, Xiaopeng Sun, Wenlong Ma, Sarah Xu, Peter Hu

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

This paper reports the device process and reliability aspects of a high voltage InGaP/GaAs HBT technology for 28V operation. The key differences and challenges from the material and process perspectives relative to the conventional low voltage HBT technology are first described. Long-term reliability tests performed at 28V bias voltage, 5.2kA/cm(2) current density and 310 degrees C junction temperature resulted in zero device failures after over 3600 hours of stress. Wafer-level reliability tests using extreme current stress conditions were used to force transistors to degrade in short time for quick checking of transistor integrity and process reliability. Transistor lifetimes were generally higher than those in conventional low voltage HBTs at similar junction temperatures. Combining with the previously reported ruggedness and linearity performance, the high voltage InGaP/GaAs HBT is a mature technology for use in the 28V high linearity power amplification.

Original language	English
Title of host publication	3rd IEEE Compound Semiconductor Integrated Circuit Symposium
Publisher	IEEE
Pages	191-194
Number of pages	4
ISBN (Print)	978-1-4244-0126-0
State	Published - 2006
Event	3rd IEEE Compound Semiconductor Integrated Circuit Symposium - San Antonio, United States Duration: 12 Nov 2006 → 15 Nov 2006

Publication series

Name	IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest
ISSN (Print)	1550-8781

Conference

Conference	3rd IEEE Compound Semiconductor Integrated Circuit Symposium
Country	United States
City	San Antonio
Period	12/11/06 → 15/11/06

Keywords

InGaPHBT; high voltage HBT; HBT reliability; wafer-level reliability

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Chau, Frank Hin-Fai ; Lin, Barry Jia-Fu ; Chen, Yan ; Kretschmar, Mark ; Lee, Chien-Ping ; Wang, Nan-lei Larry ; Sun, Xiaopeng ; Ma, Wenlong ; Xu, Sarah ; Hu, Peter. / Reliability study of InGaP/GaAs HBT for 28V operation. 3rd IEEE Compound Semiconductor Integrated Circuit Symposium. IEEE, 2006. pp. 191-194 (IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest).

@inproceedings{38d62386ae0d4033b35930f8302a2739,

title = "Reliability study of InGaP/GaAs HBT for 28V operation",

abstract = "This paper reports the device process and reliability aspects of a high voltage InGaP/GaAs HBT technology for 28V operation. The key differences and challenges from the material and process perspectives relative to the conventional low voltage HBT technology are first described. Long-term reliability tests performed at 28V bias voltage, 5.2kA/cm(2) current density and 310 degrees C junction temperature resulted in zero device failures after over 3600 hours of stress. Wafer-level reliability tests using extreme current stress conditions were used to force transistors to degrade in short time for quick checking of transistor integrity and process reliability. Transistor lifetimes were generally higher than those in conventional low voltage HBTs at similar junction temperatures. Combining with the previously reported ruggedness and linearity performance, the high voltage InGaP/GaAs HBT is a mature technology for use in the 28V high linearity power amplification.",

keywords = "InGaPHBT; high voltage HBT; HBT reliability; wafer-level reliability",

author = "Chau, {Frank Hin-Fai} and Lin, {Barry Jia-Fu} and Yan Chen and Mark Kretschmar and Chien-Ping Lee and Wang, {Nan-lei Larry} and Xiaopeng Sun and Wenlong Ma and Sarah Xu and Peter Hu",

year = "2006",

language = "English",

isbn = "978-1-4244-0126-0",

series = "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest",

publisher = "IEEE",

pages = "191--194",

booktitle = "3rd IEEE Compound Semiconductor Integrated Circuit Symposium",

note = "null ; Conference date: 12-11-2006 Through 15-11-2006",

}

Chau, FH-F, Lin, BJ-F, Chen, Y, Kretschmar, M, Lee, C-P, Wang, NL, Sun, X, Ma, W, Xu, S & Hu, P 2006, Reliability study of InGaP/GaAs HBT for 28V operation. in 3rd IEEE Compound Semiconductor Integrated Circuit Symposium. IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest, IEEE, pp. 191-194, 3rd IEEE Compound Semiconductor Integrated Circuit Symposium, San Antonio, United States, 12/11/06.

Reliability study of InGaP/GaAs HBT for 28V operation. / Chau, Frank Hin-Fai; Lin, Barry Jia-Fu; Chen, Yan; Kretschmar, Mark; Lee, Chien-Ping; Wang, Nan-lei Larry; Sun, Xiaopeng; Ma, Wenlong; Xu, Sarah; Hu, Peter.

3rd IEEE Compound Semiconductor Integrated Circuit Symposium. IEEE, 2006. p. 191-194 (IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Reliability study of InGaP/GaAs HBT for 28V operation

AU - Chau, Frank Hin-Fai

AU - Lin, Barry Jia-Fu

AU - Chen, Yan

AU - Kretschmar, Mark

AU - Lee, Chien-Ping

AU - Wang, Nan-lei Larry

AU - Sun, Xiaopeng

AU - Ma, Wenlong

AU - Xu, Sarah

AU - Hu, Peter

PY - 2006

Y1 - 2006

N2 - This paper reports the device process and reliability aspects of a high voltage InGaP/GaAs HBT technology for 28V operation. The key differences and challenges from the material and process perspectives relative to the conventional low voltage HBT technology are first described. Long-term reliability tests performed at 28V bias voltage, 5.2kA/cm(2) current density and 310 degrees C junction temperature resulted in zero device failures after over 3600 hours of stress. Wafer-level reliability tests using extreme current stress conditions were used to force transistors to degrade in short time for quick checking of transistor integrity and process reliability. Transistor lifetimes were generally higher than those in conventional low voltage HBTs at similar junction temperatures. Combining with the previously reported ruggedness and linearity performance, the high voltage InGaP/GaAs HBT is a mature technology for use in the 28V high linearity power amplification.

AB - This paper reports the device process and reliability aspects of a high voltage InGaP/GaAs HBT technology for 28V operation. The key differences and challenges from the material and process perspectives relative to the conventional low voltage HBT technology are first described. Long-term reliability tests performed at 28V bias voltage, 5.2kA/cm(2) current density and 310 degrees C junction temperature resulted in zero device failures after over 3600 hours of stress. Wafer-level reliability tests using extreme current stress conditions were used to force transistors to degrade in short time for quick checking of transistor integrity and process reliability. Transistor lifetimes were generally higher than those in conventional low voltage HBTs at similar junction temperatures. Combining with the previously reported ruggedness and linearity performance, the high voltage InGaP/GaAs HBT is a mature technology for use in the 28V high linearity power amplification.

KW - InGaPHBT; high voltage HBT; HBT reliability; wafer-level reliability

M3 - Conference contribution

SN - 978-1-4244-0126-0

T3 - IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest

SP - 191

EP - 194

BT - 3rd IEEE Compound Semiconductor Integrated Circuit Symposium

PB - IEEE

Y2 - 12 November 2006 through 15 November 2006

ER -