Reliability study of InGaP/GaAs HBT for 28V operation

Frank Hin-Fai Chau, Barry Jia-Fu Lin, Yan Chen, Mark Kretschmar, Chien-Ping Lee, Nan-lei Larry Wang, Xiaopeng Sun, Wenlong Ma, Sarah Xu, Peter Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations


This paper reports the device process and reliability aspects of a high voltage InGaP/GaAs HBT technology for 28V operation. The key differences and challenges from the material and process perspectives relative to the conventional low voltage HBT technology are first described. Long-term reliability tests performed at 28V bias voltage, 5.2kA/cm(2) current density and 310 degrees C junction temperature resulted in zero device failures after over 3600 hours of stress. Wafer-level reliability tests using extreme current stress conditions were used to force transistors to degrade in short time for quick checking of transistor integrity and process reliability. Transistor lifetimes were generally higher than those in conventional low voltage HBTs at similar junction temperatures. Combining with the previously reported ruggedness and linearity performance, the high voltage InGaP/GaAs HBT is a mature technology for use in the 28V high linearity power amplification.
Original languageEnglish
Title of host publication3rd IEEE Compound Semiconductor Integrated Circuit Symposium
Number of pages4
ISBN (Print)978-1-4244-0126-0
StatePublished - 2006
Event3rd IEEE Compound Semiconductor Integrated Circuit Symposium - San Antonio, United States
Duration: 12 Nov 200615 Nov 2006

Publication series

NameIEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest
ISSN (Print)1550-8781


Conference3rd IEEE Compound Semiconductor Integrated Circuit Symposium
CountryUnited States
CitySan Antonio


  • InGaPHBT; high voltage HBT; HBT reliability; wafer-level reliability

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