Reliability properties and current conduction mechanisms of HfO2 MIS capacitor with dual plasma treatment

Kow-Ming Chang, Ting Chia Chang*, Shou Hsien Chen, I. Chung Deng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The incorporation of nitrogen in HfO2 gate dielectrics has been reported to be beneficial for electrical performance. The improvement in the electrical characteristics of HfO2 thin film with plasma nitridation process or plasma fluorination process has also been examined. In this study, dual plasma, CF4 pre-treatment and nitrogen post-treatment, treatments were performed on HfO2 MIS capacitor for further improvement on reliability characteristic. We examine the reliability properties and the current conduction mechanism of HfO2 thin films. The frequency dispersion and constant voltage stress (CVS) characteristics of the samples were analyzed to estimate the improvement. According to the present study, dual plasma treatment could be better than single plasma treatment and would be an effective approach for HfO2 dielectric improvement.

Original languageEnglish
Title of host publicationSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
Pages909-921
Number of pages13
Edition4
DOIs
StatePublished - 2 Aug 2011
EventSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting - Montreal, QC, Canada
Duration: 1 May 20116 May 2011

Publication series

NameECS Transactions
Number4
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period1/05/116/05/11

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    Chang, K-M., Chang, T. C., Chen, S. H., & Deng, I. C. (2011). Reliability properties and current conduction mechanisms of HfO2 MIS capacitor with dual plasma treatment. In Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 (4 ed., pp. 909-921). (ECS Transactions; Vol. 35, No. 4). https://doi.org/10.1149/1.3572328