Reliability phenomena under AC stress

Chen-Ming Hu*

*Corresponding author for this work

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

Reliability phenomena are usually studied as DC effects at first. AC effects become important to setting realistic reliability acceptance criteria and predicting circuit reliability as technology scaling gradually erodes the margin of safety. This paper reviews the AC effects in hot-electron effect, electromigration, and gate oxide breakdown and stability.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalMicroelectronics Reliability
Volume38
Issue number1
DOIs
StatePublished - 20 Feb 1998

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