Reliability of ultrathin high-κ dielectrics on chemical-vapor deposited 2D semiconductors

Zhihao Yu, Hongkai Ning, Chao Ching Cheng, Weisheng Li, Lei Liu, Wanqing Meng, Zhongzhong Luo, Taotao Li, Songhua Cai, Peng Wang, Wen Hao Chang, Chao Hsin Chien, Yi Shi, Yong Xu, Lain Jong Li, Xinran Wang*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

2D semiconductors are considered to be one of the most promising channel materials to extend transistor scaling. However, the integration of ultra-thin dielectrics on 2D semiconductors has been challenging, and the reliability has not been investigated to date. Here, using monolayer 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) molecules as interface layer, we realize EOT as low as 1.7 nm on large-area monolayer CVD MoS2. The reliability of ultrathin high-κ dielectric on 2D semiconductors is systematically studied for the first time. The median breakdown (BD) field of HfO2/PTCDA stack is over 8.42 MV/cm, which is two times that of HfO2/Si under the same EOT. Through TDDB we project that the gate dielectric can work reliably for 10 years under EBD = 6.5 MV/cm, which shows 85% improvement than HfO2/Si. The BD current increase rate in our gate stack is several orders of magnitude smaller than HfO2/Si. The excellent reliability suggests that molecular interfacial layer is a promising dielectric technology for 2D electronics.

Original languageEnglish
Title of host publication2020 IEEE International Electron Devices Meeting, IEDM 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3.2.1-3.3.4
ISBN (Electronic)9781728188881
DOIs
StatePublished - 12 Dec 2020
Event66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
Duration: 12 Dec 202018 Dec 2020

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2020-December
ISSN (Print)0163-1918

Conference

Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
CountryUnited States
CityVirtual, San Francisco
Period12/12/2018/12/20

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