Reliability of thin SiO2

K. F. Schuegraf*, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

97 Scopus citations

Abstract

This article reviews reliability phenomena in thin silicon dioxide. We discuss a comprehensive framework for evaluating measured SiO2 breakdown data which enables assurance of built-in oxide reliability for scaled MOS technologies. Promising technological improvements for improving SiO 2 reliability are also reviewed. We discuss an integrative view for explaining the many diverse observations about the process of oxide wear-out and failure.

Original languageEnglish
Article number002
Pages (from-to)989-1004
Number of pages16
JournalSemiconductor Science and Technology
Volume9
Issue number5
DOIs
StatePublished - 1 Dec 1994

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