Reliability of thin SiO2 at direct-tunneling voltages

Klaus F. Schuegraf; Donggun Park; Chen-Ming Hu

doi:10.1109/IEDM.1994.383336

Reliability of thin SiO2 at direct-tunneling voltages

Klaus F. Schuegraf^*, Donggun Park, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

25 Scopus citations

Abstract

We investigate the factors that impact thickness scaling of silicon dioxide gate insulators in VLSI technology. At low voltages, the Direct-Tunneling mechanism is shown to result in oxide leakage current orders-of-magnitude higher than predicted by Fowler-Nordheim theory. Both intrinsic and defect oxide breakdown reliability is accurately predicted at low voltages using the anode hole injection model. The stability of device parameters is investigated to show feasible MOSFET operation in the low voltage, Direct-Tunneling regime.

Original language	English
Pages (from-to)	609-612
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1994.383336
State	Published - 1 Dec 1994
Event	Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 11 Dec 1994 → 14 Dec 1994

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title = "Reliability of thin SiO2 at direct-tunneling voltages",

abstract = "We investigate the factors that impact thickness scaling of silicon dioxide gate insulators in VLSI technology. At low voltages, the Direct-Tunneling mechanism is shown to result in oxide leakage current orders-of-magnitude higher than predicted by Fowler-Nordheim theory. Both intrinsic and defect oxide breakdown reliability is accurately predicted at low voltages using the anode hole injection model. The stability of device parameters is investigated to show feasible MOSFET operation in the low voltage, Direct-Tunneling regime.",

author = "Schuegraf, {Klaus F.} and Donggun Park and Chen-Ming Hu",

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AU - Park, Donggun

AU - Hu, Chen-Ming

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N2 - We investigate the factors that impact thickness scaling of silicon dioxide gate insulators in VLSI technology. At low voltages, the Direct-Tunneling mechanism is shown to result in oxide leakage current orders-of-magnitude higher than predicted by Fowler-Nordheim theory. Both intrinsic and defect oxide breakdown reliability is accurately predicted at low voltages using the anode hole injection model. The stability of device parameters is investigated to show feasible MOSFET operation in the low voltage, Direct-Tunneling regime.

AB - We investigate the factors that impact thickness scaling of silicon dioxide gate insulators in VLSI technology. At low voltages, the Direct-Tunneling mechanism is shown to result in oxide leakage current orders-of-magnitude higher than predicted by Fowler-Nordheim theory. Both intrinsic and defect oxide breakdown reliability is accurately predicted at low voltages using the anode hole injection model. The stability of device parameters is investigated to show feasible MOSFET operation in the low voltage, Direct-Tunneling regime.

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