Reliability of thin SiO2 at direct-tunneling voltages

Klaus F. Schuegraf*, Donggun Park, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

25 Scopus citations

Abstract

We investigate the factors that impact thickness scaling of silicon dioxide gate insulators in VLSI technology. At low voltages, the Direct-Tunneling mechanism is shown to result in oxide leakage current orders-of-magnitude higher than predicted by Fowler-Nordheim theory. Both intrinsic and defect oxide breakdown reliability is accurately predicted at low voltages using the anode hole injection model. The stability of device parameters is investigated to show feasible MOSFET operation in the low voltage, Direct-Tunneling regime.

Original languageEnglish
Pages (from-to)609-612
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1994
EventProceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 11 Dec 199414 Dec 1994

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