Reliability of multilevel metallization on InGaAs/GaAs layers

Edward Yi Chang*, J. S. Chen, J. W. Wu, K. C. Lin

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

Non-alloyed ohmic contacts using Ti/Pt/Au and Ni/Ge/Au on InGaAs/GaAs layers grown by Molecular Beam Epitaxy (MBE) have been investigated. The n-type InGaAs film has a doping concentration higher than 1×1019 cm-3. Specific contact resistance below 2×10-7 Ωcm2 could be easily achieved with Ti/Pt/Au. Due to the layer intermixing and outdiffusion of In and Ga, the specific contact resistance and sheet resistance increase after thermal treatment. When Ni/Ge/Au is used as the contact metal, the outdiffusion of In and Ga atoms is more severe than that of Ti/Pt/Au. After annealing at 450°C for two minutes, the Au4In formed and the characteristics of the contact became worse. All the phenomena illustrated above have been observed and investigated by Transmission Line Model, X-ray diffraction, Auger Electron Spectroscopy and Secondary Ion Mass Spectrum. As far as the thermal stability is concerned, it is convinced that Ti/Pt/Au is the best one of these two non-alloyed ohmic contact studied.

Original languageEnglish
Pages (from-to)387-392
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume337
DOIs
StatePublished - 1 Dec 1994
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: 4 Apr 19948 Apr 1994

Fingerprint Dive into the research topics of 'Reliability of multilevel metallization on InGaAs/GaAs layers'. Together they form a unique fingerprint.

Cite this