The reliability issues of two-bit storage nitride flash memory cells including low-Vt state threshold voltage instability, read-disturb, and high-Vt state charge loss will be addressed. Responsible mechanisms and reliability models will be discussed. Our study shows that the cell reliability is strongly dependent on operation methods and process conditions.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 2003|
|Event||IEEE International Electron Devices Meeting - Washington, DC, United States|
Duration: 8 Dec 2003 → 10 Dec 2003