Reliability Models of Data Retention and Read-Disturb in 2-bit Nitride Storage Flash Memory Cells (Invited Paper)

Ta-Hui Wang*, W. J. Tsai, S. H. Gu, C. T. Chan, C. C. Yeh, N. K. Zous, T. C. Lu, Sam Pan, C. Y. Lu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

40 Scopus citations

Abstract

The reliability issues of two-bit storage nitride flash memory cells including low-Vt state threshold voltage instability, read-disturb, and high-Vt state charge loss will be addressed. Responsible mechanisms and reliability models will be discussed. Our study shows that the cell reliability is strongly dependent on operation methods and process conditions.

Original languageEnglish
Pages (from-to)169-172
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 2003
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 8 Dec 200310 Dec 2003

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