Reliability issues of MOS and bipolar ICs

Chen-Ming Hu*

*Corresponding author for this work

Research output: Contribution to conferencePaper

8 Scopus citations

Abstract

Reliability issues affecting MOS and bipolar ICs are reviewed. Hot-carrier-induced degradation of MOS and bipolar circuits are used to illustrate the potential role of reliability CAD tools. Electromigration lifetimes under pulse DC and AC current stressing are longer than previously thought. Oxide breakdown offers a case study for accelerated test modeling, defect statistics, and burn-in optimization.

Original languageEnglish
Pages438-442
Number of pages5
StatePublished - 1 Dec 1989
EventProceedings - 1989 IEEE International Conference on Computer Design: VLSI in Computers & Processors - Cambridge, MA, USA
Duration: 2 Oct 19894 Oct 1989

Conference

ConferenceProceedings - 1989 IEEE International Conference on Computer Design: VLSI in Computers & Processors
CityCambridge, MA, USA
Period2/10/894/10/89

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    Hu, C-M. (1989). Reliability issues of MOS and bipolar ICs. 438-442. Paper presented at Proceedings - 1989 IEEE International Conference on Computer Design: VLSI in Computers & Processors, Cambridge, MA, USA, .