Reliability improvement of InGaZnO thin film transistors encapsulated under nitrogen ambient

Chun Yu Wu*, Huang-Chung Cheng, Chao Lung Wang, Ta Chuan Liao, Po Chun Chiu, Chih Hung Tsai, Chun Hsiang Fang, Chung Chun Lee

*Corresponding author for this work

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Abstract

The nitrogen ambient encapsulation (NAE) technique is introduced to improve the reliability issue for the amorphous InGaZnO (a-IGZO) thin-film transistors under positive gate bias stress (PGBS). For the NAE devices, the threshold voltage (V th ) shift is significantly decreased from 1.88 to 0.09 V and the reduction of saturation drain current is improved from 15.75 to 5.61 μA as compared to the bare a-IGZO counterparts after PGBS. These improvements are attributed to the suppression of negatively charged oxygen adsorption on the a-IGZO backsurface and thereby well maintain the channel potential of NAE devices, which in turn sustain the V th during PGBS.

Original languageEnglish
Article number152108
JournalApplied Physics Letters
Volume100
Issue number15
DOIs
StatePublished - 9 Apr 2012

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    Wu, C. Y., Cheng, H-C., Wang, C. L., Liao, T. C., Chiu, P. C., Tsai, C. H., Fang, C. H., & Lee, C. C. (2012). Reliability improvement of InGaZnO thin film transistors encapsulated under nitrogen ambient. Applied Physics Letters, 100(15), [152108]. https://doi.org/10.1063/1.3702794