Reliability improvement in GaN HEMT power device using a field plate approach

Wen Hao Wu, Yueh Chin Lin, Ping Chieh Chin, Chia Chieh Hsu, Jin Hwa Lee, Shih Chien Liu, Jer shen Maa, Hiroshi Iwai, Edward Yi Chang, Heng-Tung Hsu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


This study investigates the effect of implementing a field plate on a GaN high-electron-mobility transistor (HEMT) to improve power device reliability. The results indicate that the field plate structure reduces the peak electrical field and interface traps in the device, resulting in higher breakdown voltage, lower leakage current, smaller current collapse, and better threshold voltage control. Furthermore, after high voltage stress, steady dynamic on-resistance and gate capacitance degradation improvement were observed for the device with the field plate. This demonstrates that GaN device reliability can be improved by using the field plate approach.

Original languageEnglish
Pages (from-to)64-69
Number of pages6
JournalSolid-State Electronics
StatePublished - 1 Jul 2017


  • Field plate
  • GaN HEMT
  • High-voltage stress
  • Reliability

Fingerprint Dive into the research topics of 'Reliability improvement in GaN HEMT power device using a field plate approach'. Together they form a unique fingerprint.

Cite this