Abstract
This study investigates the effect of implementing a field plate on a GaN high-electron-mobility transistor (HEMT) to improve power device reliability. The results indicate that the field plate structure reduces the peak electrical field and interface traps in the device, resulting in higher breakdown voltage, lower leakage current, smaller current collapse, and better threshold voltage control. Furthermore, after high voltage stress, steady dynamic on-resistance and gate capacitance degradation improvement were observed for the device with the field plate. This demonstrates that GaN device reliability can be improved by using the field plate approach.
Original language | English |
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Pages (from-to) | 64-69 |
Number of pages | 6 |
Journal | Solid-State Electronics |
Volume | 133 |
DOIs | |
State | Published - 1 Jul 2017 |
Keywords
- Field plate
- GaN HEMT
- High-voltage stress
- Reliability