Reliability characteristics of W-La2O3 structures compared with those of HfO2-based gate oxides

J. Molina*, F. J. De La Hidalga, P. Rosales, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, we report and compare the reliability results obtained for W-La2O3 gated Metal-Oxide-Semiconductor (MOS) devices with those of HfO2-based systems reported in literature. Reliability issues like stress-induced leakage current (SILC), interface-states generation (Dit), threshold voltage shift (ΔVth) and time to breakdown (t bd) were compared and analyzed for both dielectrics in order to obtain a more specific assessment of their resistance to electrical degradation and breakdown.

Original languageEnglish
Title of host publication2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs
StatePublished - 2008
Event2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China
Duration: 8 Dec 200810 Dec 2008

Publication series

Name2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Conference

Conference2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryChina
CityHong Kong
Period8/12/0810/12/08

Fingerprint Dive into the research topics of 'Reliability characteristics of W-La<sub>2</sub>O<sub>3</sub> structures compared with those of HfO<sub>2</sub>-based gate oxides'. Together they form a unique fingerprint.

Cite this