The authors provided the reliability characteristics of nonvolatile nickel-silicide nanocrystal memories embedded in oxide and nitride layers for next-generation nonvolatile memory application. The charge trapping layer was deposited by sputtering a commixed target in the argon and oxygen/nitrogen ambiances, and then using a low temperature rapid thermal annealing to form nanocrystals. Transmission electron microscope clearly shows the sharpness and the density of nanocrystals. These proposed memory structures were compared for the charge storage ability, retention, and endurance. In addition, we used a simple simulation of electric field for nonvolatile nanocrystals memory to explain the advantages by using the high-k dielectric. (C) 2008 American Institute of Physics.
Chen, W. R., Chang, T. C., Yeh, J. L., Sze, S. M., & Chang, C-Y. (2008). Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application. Applied Physics Letters. https://doi.org/10.1063/1.2905812