As flash memories move toward giga-bits era, several challenges limit their scalability. Floating gate flash memories face the problems of un-scalable tunnel oxide, and the last technology node of NOR Flash was predicted to be 65nm, based on the extrapolation of the difference between physical and electrical cell dimensions vs. generations, which drops to zero at 45nm. Although SONOS-type flash memories show better scalability and simpler process, there are still some difficulties. In this paper, three SONOS-type flash memories (SONOS, NROM and PHINES) are compared and the scaling problems and reliability issues are disclosed.
|Number of pages||4|
|State||Published - 1 Dec 2004|
|Event||Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan|
Duration: 5 Jul 2004 → 8 Jul 2004
|Conference||Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004|
|Period||5/07/04 → 8/07/04|