Reliability and device scaling challenges of trapping charge flash memories

C. C. Yeh*, W. J. Tsai, T. C. Lu, Y. Y. Liao, N. K. Zous, H. Y. Chen, Ta-Hui Wang, Wenchi Ting, Joseph Ku, Chih Yuan Lu

*Corresponding author for this work

Research output: Contribution to conferencePaper

5 Scopus citations

Abstract

As flash memories move toward giga-bits era, several challenges limit their scalability. Floating gate flash memories face the problems of un-scalable tunnel oxide, and the last technology node of NOR Flash was predicted to be 65nm, based on the extrapolation of the difference between physical and electrical cell dimensions vs. generations, which drops to zero at 45nm. Although SONOS-type flash memories show better scalability and simpler process, there are still some difficulties. In this paper, three SONOS-type flash memories (SONOS, NROM and PHINES) are compared and the scaling problems and reliability issues are disclosed.

Original languageEnglish
Pages247-250
Number of pages4
StatePublished - 1 Dec 2004
EventProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan
Duration: 5 Jul 20048 Jul 2004

Conference

ConferenceProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
CountryTaiwan
Period5/07/048/07/04

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    Yeh, C. C., Tsai, W. J., Lu, T. C., Liao, Y. Y., Zous, N. K., Chen, H. Y., Wang, T-H., Ting, W., Ku, J., & Lu, C. Y. (2004). Reliability and device scaling challenges of trapping charge flash memories. 247-250. Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan.