Reliability analysis of InGaN Blu-Ray laser diode

Nicola Trivellin*, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Kenji Orita, Masaaki Yuri, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The purpose of this work is an in depth reliability analysis of Blu-Ray InGaN laser diodes (LD) submitted to CW stress at different currents and temperatures. During reliability tests, LD devices exhibit a gradual threshold current increase, while slope efficiency is almost not affected by the ageing treatment. Furthermore we demonstrate that: (i) the degradation rate shows a linear correlation with stress current level; (ii) the Ith increase is correlated to the decrease in non-radiative lifetime (τnr); (iii) stress temperature acts as an accelerating factor for LD degradation; (iv) pure thermal storage does not significantly degrade LDs characteristics.

Original languageEnglish
Pages (from-to)1236-1239
Number of pages4
JournalMicroelectronics Reliability
Volume49
Issue number9-11
DOIs
StatePublished - 1 Sep 2009

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