Relaxation-free strained SiGe with super anneal for 32nm high performance PMOS and beyond

Ming H. Yu, J. H. Li, H. H. Lin, C. H. Chen, K. C. Ku, C. F. Nieh, H. Hisa, Y. M. Sheu, C. W. Tsai, Y. L. Wang, H. Y. Chu, Huang-Chung Cheng, T. L. Lee, S. C. Chen, M. S. Liang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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