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Relaxation-free strained SiGe with super anneal for 32nm high performance PMOS and beyond
Ming H. Yu, J. H. Li, H. H. Lin, C. H. Chen, K. C. Ku, C. F. Nieh, H. Hisa, Y. M. Sheu, C. W. Tsai, Y. L. Wang, H. Y. Chu, Huang-Chung Cheng, T. L. Lee, S. C. Chen, M. S. Liang
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution