Relationships between the crystalline phase of an IGZO target and electrical properties of a-IGZO channel film

Yih Shing Lee*, Zuo Ming Dai, Cheng I. Lin, Horng-Chih Lin

*Corresponding author for this work

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

This study used powders containing different In 2O 3-Ga 2O 3-ZnO (IGZO) chemical compositions to manufacture targets using a metallurgical process. The resulting targets were used to deposit amorphous In-Ga-Zn-O (a-IGZO) channel films by a radio frequency magnetron sputtering process. This study examined the relationships between these target compositions and crystalline phases of the powders and the resulting material characterization, examining the impacts on electrical characteristics of a-IGZO films with varied O 2 flow rates. The ternary compound phase of ZnGa 2O 4 became stable at 1000°C according to XRD diagrams at different calcining temperatures. An analysis of the XRD diagrams of different compositions of IGZO powders showed that the atomic ratio of ZnO is larger than that of In 2O 3 and Ga 2O 3, and that the main peaks (1 0 1) and (0 0 15) intensity of the respective InGaZnO 4 and InGaZnO 6 phases intensity would increase. Ceramic targets with different compositions were used to deposit the a-IGZO films with varied O 2 flow rates. When the O 2 flow rate was zero, the results of a Hall measurement of a-IGZO films deposited from targets with higher Zn atomic ratio showed lower resistivity, higher carrier concentration, and lower mobility. Nevertheless, as the O 2 flow rate was more than 5 sccm, increasing the atom ratio of Zn in the IGZO ceramic target obviously increased the capability of capturing O 2 in the a-IGZO films, leading to higher resistivity, lower carrier concentration (<10 18 cm -3), and higher mobility.

Original languageEnglish
JournalCeramics International
Volume38
Issue numberSUPPL. 1
DOIs
StatePublished - 1 Jan 2012

Keywords

  • A. Films
  • B. X-ray methods
  • C. Electrical properties
  • IGZO

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