Relationship between mobility and high-κ Interface properties in advanced Si and SiGe nanowires

K. Tachi*, M. Casse, D. Jang, C. Dupré, A. Hubert, N. Vulliet, V. Maffini-Alvaro, C. Vizioz, C. Carabasse, V. Delaye, J. M. Hartmann, G. Ghibaudo, H. Iwai, S. Cristoloveanu, O. Faynot, T. Ernst

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

22 Scopus citations

Abstract

For the first time, interface properties between high-κ and Si or SiGe nanowires (NWs) have been experimentally investigated by adapting charge pumping technique and lowfrequency noise measurement. It is found that the interface state density (Dit) of circular Si NWs is ∼3 times higher than that of rectangular ones with a deleterious impact on the low field mobility. The oxide trap density in SiGe NWs is otherwise ∼3.5 times higher than that of Si NWs which limits the mobility enhancement for this material.

Original languageEnglish
Title of host publication2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages12.7.1-12.7.4
DOIs
StatePublished - 2009
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: 7 Dec 20099 Dec 2009

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2009 International Electron Devices Meeting, IEDM 2009
CountryUnited States
CityBaltimore, MD
Period7/12/099/12/09

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