For the first time, interface properties between high-κ and Si or SiGe nanowires (NWs) have been experimentally investigated by adapting charge pumping technique and lowfrequency noise measurement. It is found that the interface state density (Dit) of circular Si NWs is ∼3 times higher than that of rectangular ones with a deleterious impact on the low field mobility. The oxide trap density in SiGe NWs is otherwise ∼3.5 times higher than that of Si NWs which limits the mobility enhancement for this material.
|Title of host publication||2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest|
|State||Published - 2009|
|Event||2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States|
Duration: 7 Dec 2009 → 9 Dec 2009
|Name||Technical Digest - International Electron Devices Meeting, IEDM|
|Conference||2009 International Electron Devices Meeting, IEDM 2009|
|Period||7/12/09 → 9/12/09|