Abstract
Trap generation is hard to estimate in a flash cell due to a dynamic stress field during program and erase (P/E). With the knowledge of the time-dependence of erase stress field based on Fowler-Nordheim (FN) tunneling, the V T roll up during dynamic stress is evaluated by incorporating field-dependent oxide trap generation. The extracted VT degradation slope during constant FN stress can be applied quantitatively to predict the VT during dynamic stress.
Original language | English |
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Pages | 119-121 |
Number of pages | 3 |
State | Published - 1 Dec 2004 |
Event | Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan Duration: 5 Jul 2004 → 8 Jul 2004 |
Conference
Conference | Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 |
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Country | Taiwan |
Period | 5/07/04 → 8/07/04 |