Relationship between AC stress and DC stress on tunnel oxides

N. K. Zous; Y. J. Chen; C. Y. Chin; W. J. Tsai; T. C. Lu; M. S. Chen; W. P. Lu; Ta-Hui Wang; Samuel C. Pan; Joseph Ku; Chih Yuan Lu

Relationship between AC stress and DC stress on tunnel oxides

N. K. Zous^*, Y. J. Chen, C. Y. Chin, W. J. Tsai, T. C. Lu, M. S. Chen, W. P. Lu, Ta-Hui Wang, Samuel C. Pan, Joseph Ku, Chih Yuan Lu

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Trap generation is hard to estimate in a flash cell due to a dynamic stress field during program and erase (P/E). With the knowledge of the time-dependence of erase stress field based on Fowler-Nordheim (FN) tunneling, the V _T roll up during dynamic stress is evaluated by incorporating field-dependent oxide trap generation. The extracted V_T degradation slope during constant FN stress can be applied quantitatively to predict the V_T during dynamic stress.

Original language	English
Pages	119-121
Number of pages	3
State	Published - 1 Dec 2004
Event	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan Duration: 5 Jul 2004 → 8 Jul 2004

Conference

Conference	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
Country	Taiwan
Period	5/07/04 → 8/07/04

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Zous, N. K. ; Chen, Y. J. ; Chin, C. Y. ; Tsai, W. J. ; Lu, T. C. ; Chen, M. S. ; Lu, W. P. ; Wang, Ta-Hui ; Pan, Samuel C. ; Ku, Joseph ; Lu, Chih Yuan. / Relationship between AC stress and DC stress on tunnel oxides. Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan.3 p.

@conference{b303851f111a40c483083228f47b800f,

title = "Relationship between AC stress and DC stress on tunnel oxides",

abstract = "Trap generation is hard to estimate in a flash cell due to a dynamic stress field during program and erase (P/E). With the knowledge of the time-dependence of erase stress field based on Fowler-Nordheim (FN) tunneling, the V T roll up during dynamic stress is evaluated by incorporating field-dependent oxide trap generation. The extracted VT degradation slope during constant FN stress can be applied quantitatively to predict the VT during dynamic stress.",

author = "Zous, {N. K.} and Chen, {Y. J.} and Chin, {C. Y.} and Tsai, {W. J.} and Lu, {T. C.} and Chen, {M. S.} and Lu, {W. P.} and Ta-Hui Wang and Pan, {Samuel C.} and Joseph Ku and Lu, {Chih Yuan}",

year = "2004",

month = dec,

day = "1",

language = "English",

pages = "119--121",

note = "null ; Conference date: 05-07-2004 Through 08-07-2004",

}

Relationship between AC stress and DC stress on tunnel oxides. / Zous, N. K.; Chen, Y. J.; Chin, C. Y.; Tsai, W. J.; Lu, T. C.; Chen, M. S.; Lu, W. P.; Wang, Ta-Hui; Pan, Samuel C.; Ku, Joseph; Lu, Chih Yuan.

2004. 119-121 Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Relationship between AC stress and DC stress on tunnel oxides

AU - Zous, N. K.

AU - Chen, Y. J.

AU - Chin, C. Y.

AU - Tsai, W. J.

AU - Lu, T. C.

AU - Chen, M. S.

AU - Lu, W. P.

AU - Wang, Ta-Hui

AU - Pan, Samuel C.

AU - Ku, Joseph

AU - Lu, Chih Yuan

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Trap generation is hard to estimate in a flash cell due to a dynamic stress field during program and erase (P/E). With the knowledge of the time-dependence of erase stress field based on Fowler-Nordheim (FN) tunneling, the V T roll up during dynamic stress is evaluated by incorporating field-dependent oxide trap generation. The extracted VT degradation slope during constant FN stress can be applied quantitatively to predict the VT during dynamic stress.

AB - Trap generation is hard to estimate in a flash cell due to a dynamic stress field during program and erase (P/E). With the knowledge of the time-dependence of erase stress field based on Fowler-Nordheim (FN) tunneling, the V T roll up during dynamic stress is evaluated by incorporating field-dependent oxide trap generation. The extracted VT degradation slope during constant FN stress can be applied quantitatively to predict the VT during dynamic stress.

UR - http://www.scopus.com/inward/record.url?scp=20044391393&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:20044391393

SP - 119

EP - 121

Y2 - 5 July 2004 through 8 July 2004

ER -

Relationship between AC stress and DC stress on tunnel oxides

Abstract

Conference

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