Relationship between AC stress and DC stress on tunnel oxides

N. K. Zous*, Y. J. Chen, C. Y. Chin, W. J. Tsai, T. C. Lu, M. S. Chen, W. P. Lu, Ta-Hui Wang, Samuel C. Pan, Joseph Ku, Chih Yuan Lu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

Trap generation is hard to estimate in a flash cell due to a dynamic stress field during program and erase (P/E). With the knowledge of the time-dependence of erase stress field based on Fowler-Nordheim (FN) tunneling, the V T roll up during dynamic stress is evaluated by incorporating field-dependent oxide trap generation. The extracted VT degradation slope during constant FN stress can be applied quantitatively to predict the VT during dynamic stress.

Original languageEnglish
Pages119-121
Number of pages3
StatePublished - 1 Dec 2004
EventProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan
Duration: 5 Jul 20048 Jul 2004

Conference

ConferenceProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
CountryTaiwan
Period5/07/048/07/04

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