Trap generation is hard to estimate in a flash cell due to a dynamic stress field during program and erase (P/E). With the knowledge of the time-dependence of erase stress field based on Fowler-Nordheim (FN) tunneling, the V T roll up during dynamic stress is evaluated by incorporating field-dependent oxide trap generation. The extracted VT degradation slope during constant FN stress can be applied quantitatively to predict the VT during dynamic stress.
|Number of pages||3|
|State||Published - 1 Dec 2004|
|Event||Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan|
Duration: 5 Jul 2004 → 8 Jul 2004
|Conference||Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004|
|Period||5/07/04 → 8/07/04|