Relation of contact resistance reduction and process parameters of bonded copper interconnects in three-dimensional integration technology

Kuan-Neng Chen; A. Fan; C. S. Tan; R. Reif

Relation of contact resistance reduction and process parameters of bonded copper interconnects in three-dimensional integration technology

Kuan-Neng Chen^*, A. Fan, C. S. Tan, R. Reif

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Contact resistances of bonded copper interconnects in three-dimensional integration technology under different bonding conditions are investigated by using a novel test structure. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with the interconnect sizes. Underlying physical mechanism is discussed. The relationship between specific contact resistance and bonded wafer location is discussed as well. The specific contact resistance shows a lower value at the center of the wafer. Stability and reversibility tests show that the specific contact resistance does not change when the stress current is increased gradually or decreased after that. The excellent stability and reversibility of specific contact resistances shows that the microstructure of bonded Cu interconnects has reached a stable state.

Original language	English
Pages	1-5
Number of pages	5
State	Published - 1 Dec 2003
Event	Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium - Orlando, FL, United States Duration: 12 Oct 2003 → 17 Oct 2003

Conference

Conference	Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium
Country	United States
City	Orlando, FL
Period	12/10/03 → 17/10/03

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Chen, K-N., Fan, A., Tan, C. S., & Reif, R. (2003). Relation of contact resistance reduction and process parameters of bonded copper interconnects in three-dimensional integration technology. 1-5. Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.

Chen, Kuan-Neng ; Fan, A. ; Tan, C. S. ; Reif, R. / Relation of contact resistance reduction and process parameters of bonded copper interconnects in three-dimensional integration technology. Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.5 p.

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abstract = "Contact resistances of bonded copper interconnects in three-dimensional integration technology under different bonding conditions are investigated by using a novel test structure. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with the interconnect sizes. Underlying physical mechanism is discussed. The relationship between specific contact resistance and bonded wafer location is discussed as well. The specific contact resistance shows a lower value at the center of the wafer. Stability and reversibility tests show that the specific contact resistance does not change when the stress current is increased gradually or decreased after that. The excellent stability and reversibility of specific contact resistances shows that the microstructure of bonded Cu interconnects has reached a stable state.",

author = "Kuan-Neng Chen and A. Fan and Tan, {C. S.} and R. Reif",

year = "2003",

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Chen, K-N, Fan, A, Tan, CS & Reif, R 2003, 'Relation of contact resistance reduction and process parameters of bonded copper interconnects in three-dimensional integration technology', Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States, 12/10/03 - 17/10/03 pp. 1-5.

Relation of contact resistance reduction and process parameters of bonded copper interconnects in three-dimensional integration technology. / Chen, Kuan-Neng; Fan, A.; Tan, C. S.; Reif, R.

2003. 1-5 Paper presented at Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium, Orlando, FL, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Relation of contact resistance reduction and process parameters of bonded copper interconnects in three-dimensional integration technology

AU - Chen, Kuan-Neng

AU - Fan, A.

AU - Tan, C. S.

AU - Reif, R.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Contact resistances of bonded copper interconnects in three-dimensional integration technology under different bonding conditions are investigated by using a novel test structure. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with the interconnect sizes. Underlying physical mechanism is discussed. The relationship between specific contact resistance and bonded wafer location is discussed as well. The specific contact resistance shows a lower value at the center of the wafer. Stability and reversibility tests show that the specific contact resistance does not change when the stress current is increased gradually or decreased after that. The excellent stability and reversibility of specific contact resistances shows that the microstructure of bonded Cu interconnects has reached a stable state.

AB - Contact resistances of bonded copper interconnects in three-dimensional integration technology under different bonding conditions are investigated by using a novel test structure. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with the interconnect sizes. Underlying physical mechanism is discussed. The relationship between specific contact resistance and bonded wafer location is discussed as well. The specific contact resistance shows a lower value at the center of the wafer. Stability and reversibility tests show that the specific contact resistance does not change when the stress current is increased gradually or decreased after that. The excellent stability and reversibility of specific contact resistances shows that the microstructure of bonded Cu interconnects has reached a stable state.

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Y2 - 12 October 2003 through 17 October 2003

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