Contact resistances of bonded copper interconnects in three-dimensional integration technology under different bonding conditions are investigated by using a novel test structure. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with the interconnect sizes. Underlying physical mechanism is discussed. The relationship between specific contact resistance and bonded wafer location is discussed as well. The specific contact resistance shows a lower value at the center of the wafer. Stability and reversibility tests show that the specific contact resistance does not change when the stress current is increased gradually or decreased after that. The excellent stability and reversibility of specific contact resistances shows that the microstructure of bonded Cu interconnects has reached a stable state.
|Number of pages||5|
|State||Published - 1 Dec 2003|
|Event||Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium - Orlando, FL, United States|
Duration: 12 Oct 2003 → 17 Oct 2003
|Conference||Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium|
|Period||12/10/03 → 17/10/03|