Regrowth of high quality heavily Si-doped nGaN utilizing nano-rod GaN template

Cheng-Huang Kuo*, Li Chuan Chang, Hsiu Mei Chou

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

In this study, heavily Si-doped n-type GaN (n-GaN) epitaxial layers with and without nano-rod GaN (NR GaN) template were grown by metal organic chemical vapor deposition (MOCVD) system. It was found that we could achieve high-qulaity heavily Si-doped n-GaN layers by using the NR GaN template. It was also found that we can reduce etching pits density in n-GaN (1.5E19 cm -3) epitaxial layer by a factor of 2.82 using the NR GaN template, as compared to the conventional sapphire substrate.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume158
Issue number10
DOIs
StatePublished - 31 Aug 2011

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