Reflectance reduction in large-area nanostructured c-Si solar cells using dry etching method

Ming Hsuan Kao*, Ting Gang Chen, Min An Tsai, Hsin Chu Chen, Peichen Yu, Fang I. Lai, Hao-Chung Kuo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The enhanced photoelectric conversion is demonstrated in nanostructured photovoltaics using colloidal lithography and reactive-ion-etching (RIE) techniques. From the reflectance spectroscopy, trapezoid-cone arrays (TCAs) Si with SiNx passivation layer effectively suppress the Fresnel reflection in the wavelength range from 400 nm to 1000 nm. The power conversion shows the TCAs Si solar cell with 120 nm thickness of SiNx passivation layer achieves 13.736%, which is 8.87% and 2.56% enhancement compared to the conventional KOH-textured photovoltaics and TCAs with 80-nm-thick SiNx, respectively. An optical simulation based on RCWA describes the optimized shape of nanostructure to further reduce reflectance for maximum light absorption.

Original languageEnglish
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages1462-1464
Number of pages3
DOIs
StatePublished - 1 Dec 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 19 Jun 201124 Jun 2011

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period19/06/1124/06/11

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