Reflectance of sub-wavelength structure on silicon nitride for solar cell application

Kartika Chandra Sahoo, Yi-Ming Li, Edward Yi Chang, Men Ku Lin, Jin Hua Huang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, reflection properties of sub-wavelength structures (SWS) on silicon nitride (Si3N4) antireflective coatings are investigated. Numerical calculation of SWS reflection based on a rigorous coupled-wave approach is conducted and compared with the measurement of fabricated samples. We compare the results of single- and double-layer- antireflection (SLAR and DLAR) coatings with SWS on Si3N4, taking into account average residual reflectivity over a range of wavelengths, where the solar efficiency is further estimated. A low average residual reflectivity of 9.56% could be obtained for a Si3N4 SWS height and non-etched layer of 140 nm and 60 nm respectively, which will be less than 80 nm Si3N4 SLAR (∼15%) and almost the same as that of a DLAR with 60 nm Si3N4 and 70 nm magnesium fluoride (∼10%).

Original languageEnglish
Title of host publicationSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
DOIs
StatePublished - 1 Dec 2009
EventSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices - San Diego, CA, United States
Duration: 9 Sep 200911 Sep 2009

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

ConferenceSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
CountryUnited States
CitySan Diego, CA
Period9/09/0911/09/09

Keywords

  • Antireflection coating
  • Efficiency
  • Fabrication and characterization
  • Maxwell equations
  • Modeling and simulation
  • Reflectance
  • Rigorous coupled-wave approach
  • Silicon nitride
  • Sub-wavelength structure

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