Reduction substrate alkaline contamination by utilizing multi-layer bottom antireflective coating structures in ArF lithography

Hsuen Li Chen*, Ming Chang Shih, Ching Feng Hsieh, Ben Chang Chen, Fu-Hsiang Ko

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A new multilayer bottom antireflective coating (BARC) structure composed of TEOS oxide and silicon nitride film stacks is demonstrated for ArF lithography. The top TEOS oxide film is an NH3-contaminant-free material that can be used as an NH3 capping layer. After an oxygen plasma treatment, the multilayer structure is shown to have high thermal stability by thermal desorption spectrometry (TDS). The required optical constants of the bottom silicon nitride films can be tuned by varying the gas flow rate ratio of NH3 to SiH4 using a plasma-enhanced chemical vapor deposition process. The measured swing effect is found to be significantly reduced by adding a multilayer BARC on both silicon and aluminum film substrates. This BARC structure could also reduce the reflectance of various highly reflective substrates to less than 2%.

Original languageEnglish
Pages (from-to)4055-4059
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number6 B
DOIs
StatePublished - 1 Jun 2002

Keywords

  • Alkaline contamination
  • ArF lithography
  • Bottom antireflective coatings
  • Multilayers
  • Plasma treatment
  • TEOS oxide
  • Thermal stability

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