Reduction of substrate alkaline contamination by utilizing multi-layer bottom antireflective coating structures in ArF lithography

H. L. Chen, M. C. Shih, C. F. Hsieh, B. C. Chen, Fu-Hsiang Ko

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Demonstrates a new multilayer BARC structure for ArF lithography. The BARC is composed of a TEOS oxide / silicon nitride / silicon nitride film stack deposited by the conventional PECVD process. Silicon nitride films of different composition and optical properties at 193 nm can be easily obtained by varying the gas flow rate ratio of SiH 4 and NH 3 . A TEOS oxide film is alkaline contamination free and can be used as NH 3 capping layer, which also has suitable optical characteristics as the top layer of a multi-layer BARC structure. Thermal stability of BARC layers is performed by thermal desorption spectroscopy to see if there is alkaline contamination from BARC films. Results show that this multi-layer BARC would reduce reflectance of these highly reflective substrates to less than 2%. Therefore, this multi-layer BARC structure is expected to have great potential for various highly reflective materials with no alkaline contamination.

Original languageEnglish
Title of host publication2001 International Microprocesses and Nanotechnology Conference, MNC 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages230-231
Number of pages2
ISBN (Electronic)4891140178, 9784891140175
DOIs
StatePublished - 1 Jan 2001
EventInternational Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan
Duration: 31 Oct 20012 Nov 2001

Publication series

Name2001 International Microprocesses and Nanotechnology Conference, MNC 2001

Conference

ConferenceInternational Microprocesses and Nanotechnology Conference, MNC 2001
CountryJapan
CityShimane
Period31/10/012/11/01

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