Reduction of spontaneous surface segregation in (InP)2/(GaP)2 quantum wells grown on tilted substrates

Yi Cheng Cheng*, Kuochou Tai, Shu Tsun Chou, Kai-Feng Huang, Wen-Jen Lin Wen-Jen, C. H. Lin Alpha

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

We have studied the growth mechanism of (InP)2/(GaP)2 short-period superlattices (SPS) and In0.5Ga0.5P quantum wells grown on tilted substrates using solid-source molecular beam epitaxy (SSMBE). Both the (InP)2/(GaP)2 SPS and In0.5Ga0.5P quantum wells show blue shifts of photolumincscence (PL) wavelengths when the substrate's tilting angle is increased. The blue shift is more prominent in the SPS structure than in the In0.5Ga0.5P quantum wells. By comparing PL, polarized PL spectra and transmission electron micrographs, we confirm that the ordering effect exists in both the (InP)2/(GaP)2 SPS and In0.5Ga0.5P quantum wells when the substrate tilt angle is small, and can be greatly reduced when the substrate tilt angle is increased. We believed that the height and density of steps on substrates with larger tilt angles repress the segregation of group III adatoms.

Original languageEnglish
Pages (from-to)17-21
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number1
DOIs
StatePublished - 1 Jan 1999

Keywords

  • Polarized PL
  • SPS
  • SSMBE
  • Surface segregation

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