Reduction of Specific Contact Resistance on n-Type Implanted 4H-SiC Through Argon Inductively Coupled Plasma Treatment and Post-Metal Deposition Annealing

Jung Chien Cheng*, Bing-Yue Tsui

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The effects of Ar inductively coupled plasma (ICP) treatment on the Ohmic contact on n+-implanted SiC were investigated in this letter. The effects of ICP treatment were negligible on the Ni-silicide contact, because the treated surface layer was consumed during silicide formation. However, for the Ti contact, as the annealing temperature increased, the ion-bombardment-induced damage layer transformed to a uniform amorphous C-rich layer, and the specific contact resistance of the ICP-treated Ti contact decreased to 8.3 × 10-7 Ω-cm2 after 600 °C annealing. This is the lowest value achieved at such a low process temperature. Thus, appropriate ICP treatment and annealing can be used to form low-resistivity Ohmic contacts with a lower thermal budget that are comparable with Ni-based silicide Ohmic contacts.

Original languageEnglish
Article number8062815
Pages (from-to)1700-1703
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number12
DOIs
StatePublished - 1 Dec 2017

Keywords

  • inductively coupled plasma treatment
  • Ohmic contacts
  • Silicon carbide
  • specific contact resistance

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