TY - JOUR
T1 - Reduction of Specific Contact Resistance on n-Type Implanted 4H-SiC Through Argon Inductively Coupled Plasma Treatment and Post-Metal Deposition Annealing
AU - Cheng, Jung Chien
AU - Tsui, Bing-Yue
PY - 2017/12/1
Y1 - 2017/12/1
N2 - The effects of Ar inductively coupled plasma (ICP) treatment on the Ohmic contact on n+-implanted SiC were investigated in this letter. The effects of ICP treatment were negligible on the Ni-silicide contact, because the treated surface layer was consumed during silicide formation. However, for the Ti contact, as the annealing temperature increased, the ion-bombardment-induced damage layer transformed to a uniform amorphous C-rich layer, and the specific contact resistance of the ICP-treated Ti contact decreased to 8.3 × 10-7 Ω-cm2 after 600 °C annealing. This is the lowest value achieved at such a low process temperature. Thus, appropriate ICP treatment and annealing can be used to form low-resistivity Ohmic contacts with a lower thermal budget that are comparable with Ni-based silicide Ohmic contacts.
AB - The effects of Ar inductively coupled plasma (ICP) treatment on the Ohmic contact on n+-implanted SiC were investigated in this letter. The effects of ICP treatment were negligible on the Ni-silicide contact, because the treated surface layer was consumed during silicide formation. However, for the Ti contact, as the annealing temperature increased, the ion-bombardment-induced damage layer transformed to a uniform amorphous C-rich layer, and the specific contact resistance of the ICP-treated Ti contact decreased to 8.3 × 10-7 Ω-cm2 after 600 °C annealing. This is the lowest value achieved at such a low process temperature. Thus, appropriate ICP treatment and annealing can be used to form low-resistivity Ohmic contacts with a lower thermal budget that are comparable with Ni-based silicide Ohmic contacts.
KW - inductively coupled plasma treatment
KW - Ohmic contacts
KW - Silicon carbide
KW - specific contact resistance
UR - http://www.scopus.com/inward/record.url?scp=85031765180&partnerID=8YFLogxK
U2 - 10.1109/LED.2017.2760884
DO - 10.1109/LED.2017.2760884
M3 - Article
AN - SCOPUS:85031765180
VL - 38
SP - 1700
EP - 1703
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 12
M1 - 8062815
ER -