Reduction of nickel-silicided junction leakage by nitrogen ion implantation

Tien-Sheng Chao*, Liang Yao Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Nickel-silicided junctions with low leakage by using a nitrogen implantation process are demonstrated in this paper. This technique can significantly improve the leakage problem of Ni-silicided junction. Junctions formed by this method exhibit a very low leakage current density of about 1 × 10-9 A/cm2, which represents 2-4 times reduction compared to conventional counterparts.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number2 A
DOIs
StatePublished - 1 Feb 2002

Keywords

  • Junction
  • Leakage
  • Nickel
  • Nitrogen
  • Silicide

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