Nickel-silicided junctions with low leakage by using a nitrogen implantation process are demonstrated in this paper. This technique can significantly improve the leakage problem of Ni-silicided junction. Junctions formed by this method exhibit a very low leakage current density of about 1 × 10-9 A/cm2, which represents 2-4 times reduction compared to conventional counterparts.
|Original language||American English|
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||2 A|
|State||Published - 1 Feb 2002|