@inproceedings{7b236bce2c0642f5987e0852d7fc7347,
title = "Reduction of low-frequency noise in Si MOSFETs by using nanowire channel",
abstract = "We have investigated the noise spectral density of nanowire and planar FETs. It was experimentally found that the nanowire FET shows lower noise density than the planar FET. By a simulation using Poisson-Schr{\"o}dinger equations, the distribution of inversion carriers in the nanowire channel is located further from the interface due to quantum confinement, which well explains the observed lower noise density of nanowire FET.",
author = "K. Ohmori and W. Feng and R. Hettiarachchi and Y. Lee and S. Sato and K. Kakushima and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and K. Shiraishi and H. Iwai and K. Yamada",
year = "2012",
doi = "10.1109/ICSICT.2012.6467928",
language = "English",
isbn = "9781467324724",
series = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
booktitle = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
note = "null ; Conference date: 29-10-2012 Through 01-11-2012",
}