Reduction of low-frequency noise in Si MOSFETs by using nanowire channel

K. Ohmori; W. Feng; R. Hettiarachchi; Y. Lee; S. Sato; K. Kakushima; M. Sato; K. Fukuda; M. Niwa; K. Yamabe; K. Shiraishi; H. Iwai; K. Yamada

doi:10.1109/ICSICT.2012.6467928

Reduction of low-frequency noise in Si MOSFETs by using nanowire channel

K. Ohmori^*, W. Feng, R. Hettiarachchi, Y. Lee, S. Sato, K. Kakushima, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, K. Shiraishi, H. Iwai, K. Yamada

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We have investigated the noise spectral density of nanowire and planar FETs. It was experimentally found that the nanowire FET shows lower noise density than the planar FET. By a simulation using Poisson-Schrödinger equations, the distribution of inversion carriers in the nanowire channel is located further from the interface due to quantum confinement, which well explains the observed lower noise density of nanowire FET.

Original language	English
Title of host publication	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs	https://doi.org/10.1109/ICSICT.2012.6467928
State	Published - 2012
Event	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China Duration: 29 Oct 2012 → 1 Nov 2012

Publication series

Name	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Country	China
City	Xi'an
Period	29/10/12 → 1/11/12

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Ohmori, K., Feng, W., Hettiarachchi, R., Lee, Y., Sato, S., Kakushima, K., Sato, M., Fukuda, K., Niwa, M., Yamabe, K., Shiraishi, K., Iwai, H., & Yamada, K. (2012). Reduction of low-frequency noise in Si MOSFETs by using nanowire channel. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings [6467928] (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2012.6467928

Ohmori, K. ; Feng, W. ; Hettiarachchi, R. ; Lee, Y. ; Sato, S. ; Kakushima, K. ; Sato, M. ; Fukuda, K. ; Niwa, M. ; Yamabe, K. ; Shiraishi, K. ; Iwai, H. ; Yamada, K. / Reduction of low-frequency noise in Si MOSFETs by using nanowire channel. ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{7b236bce2c0642f5987e0852d7fc7347,

title = "Reduction of low-frequency noise in Si MOSFETs by using nanowire channel",

abstract = "We have investigated the noise spectral density of nanowire and planar FETs. It was experimentally found that the nanowire FET shows lower noise density than the planar FET. By a simulation using Poisson-Schr{\"o}dinger equations, the distribution of inversion carriers in the nanowire channel is located further from the interface due to quantum confinement, which well explains the observed lower noise density of nanowire FET.",

author = "K. Ohmori and W. Feng and R. Hettiarachchi and Y. Lee and S. Sato and K. Kakushima and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and K. Shiraishi and H. Iwai and K. Yamada",

year = "2012",

doi = "10.1109/ICSICT.2012.6467928",

language = "English",

isbn = "9781467324724",

series = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

booktitle = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "null ; Conference date: 29-10-2012 Through 01-11-2012",

}

Ohmori, K, Feng, W, Hettiarachchi, R, Lee, Y, Sato, S, Kakushima, K, Sato, M, Fukuda, K, Niwa, M, Yamabe, K, Shiraishi, K, Iwai, H & Yamada, K 2012, Reduction of low-frequency noise in Si MOSFETs by using nanowire channel. in ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 6467928, ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012, Xi'an, China, 29/10/12. https://doi.org/10.1109/ICSICT.2012.6467928

Reduction of low-frequency noise in Si MOSFETs by using nanowire channel. / Ohmori, K.; Feng, W.; Hettiarachchi, R.; Lee, Y.; Sato, S.; Kakushima, K.; Sato, M.; Fukuda, K.; Niwa, M.; Yamabe, K.; Shiraishi, K.; Iwai, H.; Yamada, K.

ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467928 (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Reduction of low-frequency noise in Si MOSFETs by using nanowire channel

AU - Ohmori, K.

AU - Feng, W.

AU - Hettiarachchi, R.

AU - Lee, Y.

AU - Sato, S.

AU - Kakushima, K.

AU - Sato, M.

AU - Fukuda, K.

AU - Niwa, M.

AU - Yamabe, K.

AU - Shiraishi, K.

AU - Iwai, H.

AU - Yamada, K.

PY - 2012

Y1 - 2012

N2 - We have investigated the noise spectral density of nanowire and planar FETs. It was experimentally found that the nanowire FET shows lower noise density than the planar FET. By a simulation using Poisson-Schrödinger equations, the distribution of inversion carriers in the nanowire channel is located further from the interface due to quantum confinement, which well explains the observed lower noise density of nanowire FET.

AB - We have investigated the noise spectral density of nanowire and planar FETs. It was experimentally found that the nanowire FET shows lower noise density than the planar FET. By a simulation using Poisson-Schrödinger equations, the distribution of inversion carriers in the nanowire channel is located further from the interface due to quantum confinement, which well explains the observed lower noise density of nanowire FET.

UR - http://www.scopus.com/inward/record.url?scp=84874921460&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2012.6467928

DO - 10.1109/ICSICT.2012.6467928

M3 - Conference contribution

AN - SCOPUS:84874921460

SN - 9781467324724

T3 - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

BT - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Y2 - 29 October 2012 through 1 November 2012

ER -

Ohmori K, Feng W, Hettiarachchi R, Lee Y, Sato S, Kakushima K et al. Reduction of low-frequency noise in Si MOSFETs by using nanowire channel. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467928. (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2012.6467928

Reduction of low-frequency noise in Si MOSFETs by using nanowire channel

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