Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels

Yung Chun Wu, Ting Chang Chang, Po-Tsun Liu, Cheng Wei Chou, Yuan Chun Wu, Chun Hao Tu, Chun Yen Chang

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

This letter addresses the leakage current in nickel (Ni) metal-induced lateral crystallization (Ni-MILC) polysilicon thin-film transistors (poly-Si TFTs) with multiple ninowire channels and dual-gate. Experimental results reveal that applying multiple nanowire channels improves the Ni-MILC poly-Si TFT performance. However, the leakage current of both single-gate with single-channel and multiple nanowire channels remains high (>10-8 A), because of the field emission of carrier, through the poly-Si grain traps and the defects caused by Ni contamination. Applying the dual-gate structure can suppress the f lectrical filed in the drain depletion region, significantly reducing the leakage current of the Ni-MILC poly-Si TFT, increasing the ON/OFF ratio.

Original languageEnglish
Pages (from-to)646-648
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number9
DOIs
StatePublished - 1 Sep 2005

Keywords

  • Dual-gate
  • Metal-induced lateral crystallization (MILC)
  • Nanowire
  • Thin-film transistor (TFT)

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