Reduction of efficiency droop in semipolar (11-01) InGaN/GaN light emitting diodes grown on patterned silicon substrates

C. H. Chiu, D. W. Lin, Chien-Chung Lin, Z. Y. Li, Hao-Chung Kuo*, Tien-chang Lu, S. C. Wang, W. T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The semi-polar InGaN-based LEDs exhibits low efficiency droop because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2011
DOIs
StatePublished - 1 Dec 2011
EventQuantum Electronics and Laser Science Conference, QELS 2011 - Baltimore, MD, United States
Duration: 1 May 20116 May 2011

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceQuantum Electronics and Laser Science Conference, QELS 2011
CountryUnited States
CityBaltimore, MD
Period1/05/116/05/11

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