The semi-polar InGaN-based LEDs exhibits low efficiency droop because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations.
|Title of host publication||Quantum Electronics and Laser Science Conference, QELS 2011|
|State||Published - 1 May 2011|
|Event||Quantum Electronics and Laser Science Conference, QELS 2011 - Baltimore, MD, United States|
Duration: 1 May 2011 → 6 May 2011
|Name||Optics InfoBase Conference Papers|
|Conference||Quantum Electronics and Laser Science Conference, QELS 2011|
|Period||1/05/11 → 6/05/11|