Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier

Ching Hsueh Chiu*, Po Min Tu, Chun Yen Chang, Shih Cheng Huang, Jet Rung Chang, Hsiao-Wen Zan, Hao-Chung Kuo, Chih Peng Hsu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The UV LEDs with quaternary InAlGaN barrier exhibit higher radiative recombination rate and low efficiency droop at a high injection current because of the better band-offset ratio and the higher carrier mobility.

Original languageEnglish
Title of host publication16th Opto-Electronics and Communications Conference, OECC 2011
Pages733-734
Number of pages2
StatePublished - 4 Oct 2011
Event16th Opto-Electronics and Communications Conference, OECC 2011 - Kaohsiung, Taiwan
Duration: 4 Jul 20118 Jul 2011

Publication series

Name16th Opto-Electronics and Communications Conference, OECC 2011

Conference

Conference16th Opto-Electronics and Communications Conference, OECC 2011
CountryTaiwan
CityKaohsiung
Period4/07/118/07/11

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  • Cite this

    Chiu, C. H., Tu, P. M., Chang, C. Y., Huang, S. C., Chang, J. R., Zan, H-W., Kuo, H-C., & Hsu, C. P. (2011). Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier. In 16th Opto-Electronics and Communications Conference, OECC 2011 (pp. 733-734). [6015348] (16th Opto-Electronics and Communications Conference, OECC 2011).