Reduction of discrete-dopant-induced high-frequency characteristic fluctuations in nanoscale CMOS circuit

Yiming Li*, Chih Hong Hwang, Ta Ching Yeh, Hsuan Ming Huang, Tien Yeh Li, Hui Wen Cheng

*Corresponding author for this work

Research output: Contribution to conferencePaper

3 Scopus citations

Abstract

As the dimension of semiconductor device shrunk into nanoscale, characteristic fluctuation is more pronounced, and become crucial for circuit design. Diverse approaches have been reported to investigate and suppress the random-dopant-induced fluctuations in devices. However, attention is seldom drawn to the existence of high-frequency characteristic fluctuations of active device. In this paper, intrinsic high-frequency characteristic fluctuations of the nanoscale MOSFET circuit induced by random dopants are intensively explored using an experimentally validated simulation methodology, where fluctuation suppression technique is further examined. The circuit gain, the 3db bandwidth and the unity-gain bandwidth of the tested circuit are estimated concurrently capturing the discrete-dopant-number-and discrete-dopant-position-induced fluctuations. This study provides an insight into discrete-dopant-induced intrinsic high-frequency characteristic fluctuations and examines the potential fluctuation suppression technique for nanoscale transistor circuit.

Original languageEnglish
Pages209-212
Number of pages4
DOIs
StatePublished - 2008
Event2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 - Hakone, Japan
Duration: 9 Sep 200811 Sep 2008

Conference

Conference2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008
CountryJapan
CityHakone
Period9/09/0811/09/08

Keywords

  • Fluctuation
  • High frequency property
  • Modeling and simulation
  • Nanoscale MOSFETs
  • Random dopant
  • Suppression

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    Li, Y., Hwang, C. H., Yeh, T. C., Huang, H. M., Li, T. Y., & Cheng, H. W. (2008). Reduction of discrete-dopant-induced high-frequency characteristic fluctuations in nanoscale CMOS circuit. 209-212. Paper presented at 2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008, Hakone, Japan. https://doi.org/10.1109/SISPAD.2008.4648274