Reduction of direct-tunneling gate leakage current in double-gate and ultra-thin body MOSFETs

Leland Chang*, Kevin J. Yang, Yee Chia Yeo, Yang Kyu Choi, Tsu Jae King, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

28 Scopus citations

Abstract

The impact of energy quantization on gate tunneling current is studied for double-gate and ultra-thin body MOSFETs. The lower vertical electric field in the channel of these thin-body devices causes a reduction in gate leakage by as much as an order of magnitude. The additional effects of channel doping and high-κ dielectrics are also investigated.

Original languageEnglish
Pages (from-to)99-102
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 2001
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: 2 Dec 20015 Dec 2001

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