The impact of energy quantization on gate tunneling current is studied for double-gate and ultra-thin body MOSFETs. The lower vertical electric field in the channel of these thin-body devices causes a reduction in gate leakage by as much as an order of magnitude. The additional effects of channel doping and high-κ dielectrics are also investigated.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 2001|
|Event||IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States|
Duration: 2 Dec 2001 → 5 Dec 2001