Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment

Jhe Ciou Jhu, Ting Chang Chang*, Geng Wei Chang, Ya-Hsiang Tai, Wu Wei Tsai, Wen Jen Chiang, Jing Yi Yan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

An abnormal sub-threshold leakage current is observed at high temperature in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs). This phenomenon occurs due to a reduced number of defects in the device's a-IGZO active layer after the device has undergone N2O plasma treatment. Experimental verification shows that the N2O plasma treatment enhances the thin film bonding strength, thereby suppressing the formation of temperature-dependent holes, which are generated above 400 K by oxygen atoms leaving their original sites. The N2O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N2O plasma treatment is much lower than that in as-fabricated devices. The N2O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current.

Original languageEnglish
Article number204501
JournalJournal of Applied Physics
Volume114
Issue number20
DOIs
StatePublished - 28 Nov 2013

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