Reduction of contact resistance on AlGaN/GaN HEMT structures introducing uneven AlGaN layers

Yusuke Takei*, Masayuki Kamiya, Kazuo Tsutsui, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

A new technique to reduce contact resistance on AlGaN/GaN HEMTs was proposed. This method introduced uneven AlGaN layer structures. 2D device simulations revealed a clear increase in two-dimensional electron gas (2DEG) concentration near the edge regions where the AlGaN layer thickness fluctuated. This fringing effect is useful because metal and high-density 2DEG can approach each other, overcoming an inherent tradeoff involving the AlGaN layer thickness. Experiments demonstrated the effectiveness of this technique, in which contact resistances obtained on some structures with uneven AlGaN layers were lower than the lowest limit for conventional flat AlGaN structures.

Original languageEnglish
Pages (from-to)1104-1109
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume212
Issue number5
DOIs
StatePublished - 1 May 2015

Keywords

  • AlGaN
  • contact resistance
  • GaN
  • high electron mobility transistors
  • ohmic contacts
  • thin films

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