Reduction of boron penetration for a p+ polycide gate by using cobalt silicides as a boron diffusion source

M. H. Juang*, Huang-Chung Cheng, W. K. Lai, C. J. Yang

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

A scheme for forming a p+ polycide gate is described, by using BF2 implantation into CoSi/ poly-Si bilayer films and subsequent annealing. Instead of the conventional BF2 implantation into thin poly-Si films, this scheme employs the CoSi layer as an implant barrier as well as a boron diffusion source to retard the boron diffusion. The improved gate oxide integrity and the reduced flat-band voltage shift can be obtained without causing other side effects. In addition, it is found that the stack layer of CoSi/a-Si can serve as an excellent implant barrier for suppressing the boron penetration through a gate oxide.

Original languageEnglish
Pages (from-to)389-392
Number of pages4
JournalSolid-State Electronics
Volume42
Issue number3
DOIs
StatePublished - 30 Mar 1998

Fingerprint Dive into the research topics of 'Reduction of boron penetration for a p<sup>+</sup> polycide gate by using cobalt silicides as a boron diffusion source'. Together they form a unique fingerprint.

  • Cite this