Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition

Jun Wei Tsai*, Chun Yao Huang, Ya-Hsiang Tai, Huang-Chung Cheng, Feng Cheng Su, Fang Chen Luo, Hsing Chien Tuan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

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Physics & Astronomy