Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition

Jun Wei Tsai; Chun Yao Huang; Ya-Hsiang Tai; Huang-Chung Cheng; Feng Cheng Su; Fang Chen Luo; Hsing Chien Tuan

doi:10.1063/1.120435

Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition

Jun Wei Tsai^*, Chun Yao Huang, Ya-Hsiang Tai, Huang-Chung Cheng, Feng Cheng Su, Fang Chen Luo, Hsing Chien Tuan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

A short H ₂ plasma treatment of the gate SiN _x before depositing amorphous silicon (a-Si:H) is found to significantly decrease the threshold shifts in the bias stress, inverted a-Si:H thin film transistors (TFTs). The reduced threshold voltage shift is attributed to a plasma induced reconstruction of SiN _x precursors leading to the removal of the weak bonds. A prolonged plasma treatment, however, degraded the TFT characteristics; this was traced H ₂ plasma damage which eventually generated a rough a-Si:H/SiN _x interface.

Original language	English
Pages (from-to)	1237-1239
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	9
DOIs	https://doi.org/10.1063/1.120435
State	Published - 1 Sep 1997

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title = "Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition",

abstract = " A short H 2 plasma treatment of the gate SiN x before depositing amorphous silicon (a-Si:H) is found to significantly decrease the threshold shifts in the bias stress, inverted a-Si:H thin film transistors (TFTs). The reduced threshold voltage shift is attributed to a plasma induced reconstruction of SiN x precursors leading to the removal of the weak bonds. A prolonged plasma treatment, however, degraded the TFT characteristics; this was traced H 2 plasma damage which eventually generated a rough a-Si:H/SiN x interface.",

author = "Tsai, {Jun Wei} and Huang, {Chun Yao} and Ya-Hsiang Tai and Huang-Chung Cheng and Su, {Feng Cheng} and Luo, {Fang Chen} and Tuan, {Hsing Chien}",

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doi = "10.1063/1.120435",

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Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition. / Tsai, Jun Wei; Huang, Chun Yao; Tai, Ya-Hsiang; Cheng, Huang-Chung; Su, Feng Cheng; Luo, Fang Chen; Tuan, Hsing Chien.

In: Applied Physics Letters, Vol. 71, No. 9, 01.09.1997, p. 1237-1239.

Research output: Contribution to journal › Article › peer-review

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AU - Tsai, Jun Wei

AU - Huang, Chun Yao

AU - Tai, Ya-Hsiang

AU - Cheng, Huang-Chung

AU - Su, Feng Cheng

AU - Luo, Fang Chen

AU - Tuan, Hsing Chien

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AB - A short H 2 plasma treatment of the gate SiN x before depositing amorphous silicon (a-Si:H) is found to significantly decrease the threshold shifts in the bias stress, inverted a-Si:H thin film transistors (TFTs). The reduced threshold voltage shift is attributed to a plasma induced reconstruction of SiN x precursors leading to the removal of the weak bonds. A prolonged plasma treatment, however, degraded the TFT characteristics; this was traced H 2 plasma damage which eventually generated a rough a-Si:H/SiN x interface.

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Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition

Abstract

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