Abstract
A short H 2 plasma treatment of the gate SiN x before depositing amorphous silicon (a-Si:H) is found to significantly decrease the threshold shifts in the bias stress, inverted a-Si:H thin film transistors (TFTs). The reduced threshold voltage shift is attributed to a plasma induced reconstruction of SiN x precursors leading to the removal of the weak bonds. A prolonged plasma treatment, however, degraded the TFT characteristics; this was traced H 2 plasma damage which eventually generated a rough a-Si:H/SiN x interface.
Original language | English |
---|---|
Pages (from-to) | 1237-1239 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 71 |
Issue number | 9 |
DOIs | |
State | Published - 1 Sep 1997 |