Reducing Ni residues of metal induced crystallization poly-Si with a simple chemical oxide layer

Ming Hui Lai*, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The high leakage current is the most important issue of MIC-TFT. Ni residues in the MIC-TFT is the major cause of the leakage. In this study, a chemical oxide layer was used to avoid excess of Ni atoms into a-Si layer during MIC process. The process is simple and without extra thermal annealing. It was found that the Ni concentration of poly-Si film with chemical oxide layer was much less than that of conventional MIC poly-Si film. As a result, the leakage current was improved.

Original languageEnglish
Title of host publicationThin Film Transistors 10, TFT 10
Pages157-159
Number of pages3
Edition5
DOIs
StatePublished - 1 Dec 2010
Event10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 11 Oct 201015 Oct 2010

Publication series

NameECS Transactions
Number5
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period11/10/1015/10/10

Fingerprint Dive into the research topics of 'Reducing Ni residues of metal induced crystallization poly-Si with a simple chemical oxide layer'. Together they form a unique fingerprint.

  • Cite this

    Lai, M. H., & Wu, Y-C. (2010). Reducing Ni residues of metal induced crystallization poly-Si with a simple chemical oxide layer. In Thin Film Transistors 10, TFT 10 (5 ed., pp. 157-159). (ECS Transactions; Vol. 33, No. 5). https://doi.org/10.1149/1.3481230