Reduced residual stress and enhanced performance of GaN-based LEDs prepared by liquid phase deposition silicon oxide-nano patterned sapphire substrate

Sheng Chieh Chang, Cheng Yu Hsieh, Bo Wen Lin, Hsin Ju Cho, Wen Ching Hsu, Yew-Chuhg Wu

Research output: Contribution to journalArticle

Abstract

A simple liquid phase deposition (LPD) method was used to introduce nano SiO 2 on sapphire substrates to fabricate nano-patterned sapphire substrates with top oxide layers (MNPSS). The X-ray diffraction (XRD) rocking curves and etching pit density (EPD) analyses show that the quality of MNPSS-GaN was better than that of GaN grown on flat sapphire substrates (FLAT-GaN). The photoluminescence (PL) spectrums showed a blueshift of MNPSS-GaN peak position compared with FLAT-GaN. The analyses of XRD reciprocal space map (RSM) revealed that this shift was caused by the residual stress.

Original languageEnglish
Pages (from-to)Q53-Q55
JournalECS Solid State Letters
Volume3
Issue number11
DOIs
StatePublished - 1 Jan 2014

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