Reduced leakage current of nickel induced crystallization poly-Si TFTs by a simple chemical oxide layer

Ming Hui Lai, Yew-Chuhg Wu*

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Ni-metal-induced crystallization (MIC) of amorphous Si (α-Si) has been used to fabricate low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the leakage current of MIC-TFT is high. In this study, a chemical oxide layer was used to avoid excess of Ni atoms into α-Si layer during MIC process, which was simple and without extra expensive instrument. The minimum leakage current and on/off current ratio were significantly improved.

Original languageEnglish
Pages (from-to)6-9
Number of pages4
JournalSolid-State Electronics
Volume64
Issue number1
DOIs
StatePublished - 1 Oct 2011

Keywords

  • Chemical oxide
  • Leakage current
  • Metal-induced crystallization (MIC)
  • Poly-Si
  • Thin film transistors (TFTs)

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