Reduced Junction Leakage by Hot Phosphorus Ion Implantation of NiGe-Contacted Germanium n+/p Shallow Junction

Yi Ju Chen, Bing-Yue Tsui*, Hung Ju Chou, Ching I. Li, Ger Pin Lin, Shao Yu Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Effects of hot phosphorus (P) implantation on the NiGe-contacted Ge n+/p junction are studied in this work. At an adequately high ion-implantation temperature (150°C), the P depth profiles of the hot-implanted samples are similar to that of the room-temperature implanted ones. Hot P implantation is demonstrated effectively in reducing ion implantation induced defect formation and suppressing nickel atoms diffusion. Therefore, hot P implantation is efficient in lowering junction leakage and excellent junction characteristics exhibiting \sim 1\times 10^{6}~{J}-{ \mathrm{\scriptscriptstyle ON}}/{J}-{ \mathrm{\scriptscriptstyle OFF}} ratio is achieved.

Original languageEnglish
Article number7976289
Pages (from-to)1192-1195
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number9
DOIs
StatePublished - 1 Sep 2017

Keywords

  • Germanium
  • hot implantation
  • junction
  • phosphorus

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