Redistribution of As during Pd2Si formation: Ion channeling measurements

M. Wittmer*, C. Y. Ting, I. Ohdomari, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticle

32 Scopus citations

Abstract

We have investigated the redistribution of As during Pd2Si formation with ion channeling technique. The results show that both interstitial As and substitutional As in the Si are pushed ahead by the moving silicide-silicon interface during the growth of Pd2Si at 250 °C. This effect increases the As concentration in a region of about 100 Å beyond the interface. A model for the mechanism of As redistribution during silicide formation is suggested and implications of the effect on electrical characteristics of Schottky diodes and shallow junction devices are discussed.

Original languageEnglish
Pages (from-to)6781-6787
Number of pages7
JournalJournal of Applied Physics
Volume53
Issue number10
DOIs
StatePublished - 1 Dec 1982

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